advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -60v small package outline r ds(on) 250m surface mount device i d - 1.8a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w data and specifications subject to change without notice thermal data parameter total power dissipation operating junction temperature range storage temperature range 1.38 -55 to 150 -55 to 150 linear derating factor parameter drain-source voltage gate-source voltage continuous drain current 3 continuous drain current 3 - 1.4 pulsed drain current 1 -10 AP2311GN-HF rating - 60 200811263 halogen-free product 1 + 20 - 1.8 0.01 advanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the sot-23 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s d g s sot-23
AP2311GN-HF electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =-1ma - -0.04 - v/ : r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-1.8a - 200 250 m ? ? ?
AP2311GN-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. 3 0 2.5 5 7.5 10 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c v g = -3.0v -10v -7.0v -5.0v -4.5v 0 3 5 8 10 01234567 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -10v -7.0v -5.0v -4.5v v g = - 3 .0v 200 210 220 230 240 250 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-1.4a t a =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-1.8a v g =-10v 0.0 0.5 1.0 1.5 2.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.5 0.8 1.0 1.3 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v)
AP2311GN-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fi g 10. effective transient thermal im p edance fig 11. transfer characteristics fig 12. gate charge circuit 4 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 270
package outline : sot-23 millimeters min nom max a 1.00 1.15 1.30 a1 0.00 -- 0.10 a2 0.10 0.15 0.25 d1 0.30 0.40 0.50 e 1.70 2.00 2.30 d 2.70 2.90 3.10 e 2.40 2.65 3.00 e1 1.40 1.50 1.60 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : sot-23 advanced power electronics corp. symbols ngss part number : ng if second letter has underline : hf & rohs product if second letter has not underline : rohs product d e1 e e d1 a a1 a2 date code : ss:2004,2008,2012? ss :2003,2007,2011? s s:2002,2006,2010? ss :2001,2005,2009? "a~z" showed on 3rd position --> week 1 ~ week 26, "a~z" showed on 4th position --> week 27 ~ week 52. laser marking
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